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2N7002K
0
T CH , CHANNEL TEMPERATURE ( ° C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
1
R DS(on)
1
10
9
1
I D , DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance vs. Drain Current
Limited
8
Single Pulse
R ? JA = 240 ? C/W
T J A = P * R ? JA(t)
0.1
0.01
DC
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
P W = 1ms
P W = 100μs
7
6
5
4
3
R ? JA(t) = r (t) * R ? JA
-T
P W = 10 μ s
T J(max) = 150°C
T A = 25°C
Single Pulse
2
1
0.001
0.1
1 10
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Safe Operation Area
100
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
2N7002K
Document number: DS30896 Rev. 14 - 2
4 of 6
www.diodes.com
August 2013
? Diodes Incorporated
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